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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Surface Mount | YES |
| JESD-609 Code | e3 |
| Factory Lead Time | 12 Weeks |
| Number of Pins | 3 |
| Pin Count | 3 |
| Terminal Form | GULL WING |
| Published | 2012 |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Terminal Finish | Tin (Sn) |
| Transistor Element Material | SILICON |
| Terminal Position | SINGLE |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Transistor Application | SWITCHING |
| Operating Temperature | -55°C~175°C TJ |
| Operating Mode | ENHANCEMENT MODE |
| Max Dual Supply Voltage | 80V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 100A |
| JESD-30 Code | R-PSSO-G2 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | DRAIN |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Gate to Source Voltage (Vgs) | 4.3V |
| Fall Time (Typ) | 22 ns |
| Rise Time | 24 ns |
| Turn On Delay Time | 26 ns |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Current – Continuous Drain (Id) @ 25°C | 100A Tc |
| Power Dissipation | 210W |
| Drain to Source Breakdown Voltage | 73V |
| Turn-Off Delay Time | 57 ns |
| Avalanche Energy Rating (Eas) | 700 mJ |
| Pulsed Drain Current-Max (IDM) | 470A |
| Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
| Power Dissipation-Max | 210W Tc |
| Drain-source On Resistance-Max | 0.0069Ohm |
| Input Capacitance (Ciss) (Max) @ Vds | 4461pF @ 40V |
| Rds On (Max) @ Id, Vgs | 6.9m Ω @ 15A, 10V |
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