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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Mount | Through Hole |
| Number of Functions | 1 |
| Number of Ports | 1 |
| ECCN Code | EAR99 |
| Output Enable | YES |
| JESD-609 Code | e3 |
| Lead Free | Lead Free |
| Part Status | Obsolete |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Memory Width | 8 |
| Terminal Position | DUAL |
| Supply Voltage | 5V |
| Operating Supply Voltage | 5V |
| Power Supplies | 5V |
| Packaging | Tube |
| Qualification Status | Not Qualified |
| Terminal Pitch | 2.54mm |
| Reach Compliance Code | unknown |
| Terminal Finish | Matte Tin (Sn) |
| Number of Terminations | 24 |
| Number of Pins | 24 |
| Pin Count | 24 |
| Memory Interface | Parallel |
| Operating Temperature | 0°C~70°C TA |
| Memory Type | Non-Volatile |
| Output Characteristics | 3-STATE |
| Data Bus Width | 8b |
| Word Size | 8b |
| Peak Reflow Temperature (Cel) | 245 |
| Nominal Supply Current | 80mA |
| Operating Mode | ASYNCHRONOUS |
| Subcategory | SRAMs |
| HTS Code | 8542.32.00.41 |
| Access Time (Max) | 200 ns |
| Height Seated (Max) | 9.65mm |
| Write Cycle Time – Word, Page | 200ns |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 16Kb 2K x 8 |
| Density | 16 kb |
| Standby Current-Max | 0.003A |
| Organization | 2KX8 |
| Voltage – Supply | 4.75V~5.5V |
| Package / Case | 24-DIP Module (0.600, 15.24mm) |
| Frequency | 200GHz |
| Length | 34.545mm |
| Additional Feature | BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION |
| Base Part Number | M48Z02 |
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