Home » 产品 » Semicondutor(IC) » Specialized ICs » BSS84AKV115

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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Elements | 2 |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Radiation Hardening | No |
| Surface Mount | YES |
| JESD-609 Code | e3 |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Drain to Source Voltage (Vdss) | 50V |
| Number of Terminations | 6 |
| Number of Pins | 6 |
| Pin Count | 6 |
| Factory Lead Time | 4 Weeks |
| Published | 2006 |
| Max Power Dissipation | 500mW |
| Transistor Element Material | SILICON |
| Gate to Source Voltage (Vgs) | 20V |
| Operating Temperature | -55°C~150°C TJ |
| Terminal Form | FLAT |
| Transistor Application | SWITCHING |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 330mW |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Fall Time (Typ) | 25 ns |
| Continuous Drain Current (ID) | 170mA |
| Turn On Delay Time | 13 ns |
| FET Feature | Logic Level Gate |
| Package / Case | SOT-563, SOT-666 |
| Drain to Source Breakdown Voltage | -50V |
| Max Dual Supply Voltage | -50V |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| FET Type | 2 P-Channel (Dual) |
| Turn-Off Delay Time | 48 ns |
| Series | Automotive, AEC-Q101, TrenchMOS? |
| Rise Time | 11ns |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Drain-source On Resistance-Max | 8.5Ohm |
| Drain Current-Max (Abs) (ID) | 0.17A |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 5V |
| Rds On (Max) @ Id, Vgs | 7.5 Ω @ 100mA, 10V |
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