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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Number of Elements | 1 |
| ECCN Code | EAR99 |
| Radiation Hardening | No |
| Surface Mount | YES |
| JESD-609 Code | e3 |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Terminal Position | DUAL |
| Number of Terminations | 3 |
| Number of Pins | 3 |
| Pin Count | 3 |
| Terminal Form | GULL WING |
| Termination | SMD/SMT |
| REACH SVHC | No SVHC |
| Peak Reflow Temperature (Cel) | 260 |
| Factory Lead Time | 4 Weeks |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Element Material | SILICON |
| Element Configuration | Single |
| Height | 1mm |
| Drain to Source Breakdown Voltage | 30V |
| Length | 3mm |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Published | 1997 |
| Width | 1.4mm |
| Transistor Application | SWITCHING |
| Operating Mode | ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) | 8V |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Resistance | 900mOhm |
| FET Type | P-Channel |
| Turn-Off Delay Time | 45 ns |
| Fall Time (Typ) | 4.5 ns |
| Rise Time | 4.5 ns |
| Max Dual Supply Voltage | -30V |
| Dual Supply Voltage | -30V |
| Turn On Delay Time | 2 ns |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Vgs (Max) | ±8V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Power Dissipation | 417mW |
| Drain Current-Max (Abs) (ID) | 0.47A |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| Power Dissipation-Max | 417mW Ta |
| Threshold Voltage | -680mV |
| Current – Continuous Drain (Id) @ 25°C | 470mA Ta |
| Vgs(th) (Max) @ Id | 680mV @ 1mA |
| Continuous Drain Current (ID) | -470mA |
| Nominal Vgs | -680 mV |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 24V |
| Rds On (Max) @ Id, Vgs | 900m Ω @ 280mA, 4.5V |
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