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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Number of Elements | 1 |
| Radiation Hardening | No |
| JESD-609 Code | e3 |
| Contact Plating | Tin |
| Terminal Position | DUAL |
| Emitter Base Voltage (VEBO) | 5V |
| Factory Lead Time | 8 Weeks |
| Number of Terminations | 3 |
| Number of Pins | 3 |
| Pin Count | 3 |
| Collector Base Voltage (VCBO) | 100V |
| Published | 2011 |
| Max Collector Current | 1A |
| Transistor Element Material | SILICON |
| Element Configuration | Single |
| hFE Min | 100 |
| Transistor Application | SWITCHING |
| Transistor Type | NPN |
| Polarity/Channel Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Max Breakdown Voltage | 80V |
| Operating Temperature | 150°C TJ |
| Collector Emitter Saturation Voltage | 500mV |
| Current – Collector Cutoff (Max) | 100nA ICBO |
| Case Connection | COLLECTOR |
| Frequency | 180MHz |
| Transition Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Power – Max | 420mW |
| Max Power Dissipation | 1.65W |
| Power Dissipation | 1.65W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA 2V |
| Package / Case | 3-PowerUDFN |
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