ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 54TFBGA

Active 3-STATE AEC-Q100 BOTTOM ic memory -40C~125C TA 2.4V 8388608bit 0.035A

Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~85C TA 1.7V 2Gb 13mm

Not For New Designs 3-STATE QUAD Volatile ic memory 0C~70C TA 3.135V 2359296bit 0.035A

Active Parallel Volatile ROHS3Compliant ic memory 105C 3.6V 16b 5.4ns

Active Volatile ROHS3Compliant Parallel ic memory 0C~70C TA 2.375V~2.625V 18Mb 512K x 36 6.5ns

Active BOTTOM Volatile SYNCHRONOUS DRAM Memory -40C~85C TA 1.7V 16b 12.5mm

Active Volatile ROHS3Compliant Parallel ic memory 0C~70C TA 3.135V~3.465V 18Mb 1M x 18 3.1ns