Integrated Device Technology (IDT)

Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 5.5V 256kb 145mA

Active THROUGH-HOLE 3-STATE 2011 (Memory Format) Memory 125C 5.5V 256kb 0.0005A

Asynchronous Active 3-STATE 2011 (Memory Format) Memory 125C 5.5V 256kb 130mA

Asynchronous Discontinued 2013 Parallel (Memory Format) Memory 70C 5.5V 1Mb 7.6mm

Asynchronous Active J BEND 3-STATE (Memory Format) Memory 85C 5.5V 1Mb 140mA

Active J BEND 3-STATE 2009 (Memory Format) Memory 85C 5.5V 1Mb 10.2mm

Asynchronous Active J BEND 3-STATE (Memory Format) Memory 85C 5.5V 1Mb 160mA

Asynchronous Active J BEND 3-STATE (Memory Format) Memory 85C 5.5V 1Mb 180mA